T0900AF65E
Date:- 9 March, 2015 Data Sheet Issue:- P1
Prospective data
Insulated Gate Bi-Polar Transistor Type T0900AF65E
Absolute Maximum Ratings
VCES VCES VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Collector
- emitter voltage (Tj 25°C) Collector
- emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate
- emitter voltage
MAXIMUM LIMITS 6500 6500 6000 3600 ±20
UNITS
V V V V V
IC ICRM ICEO PMAX Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum mutation loop inductance 300n H.
MAXIMUM LIMITS 900 1800 900 10.6
-40 to +125 -40 to +125
UNITS
A A A KW °C °C
Prospective Data Sheet T0900AF65E Issue P1
Page 1 of 6
March, 2015
Characteristics
IGBT...
