T0900AF65E - Insulated Gate Bi-Polar Transistor

IXYS (now Littelfuse)

Datasheet Details

Part number	T0900AF65E
Manufacturer	IXYS (now Littelfuse)
File Size	742.26 KB
Description	Insulated Gate Bi-Polar Transistor
Datasheet	T0900AF65E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Date:- 9 March, 2015 Data Sheet Issue:- P1 Prospective data Insulated Gate Bi-Polar Transistor Type T0900AF65E Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Collector – emitter voltage (Tj 25°C) Collector – emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM ICEO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled.