T0900DF65A
Date:- 9 March, 2015 Data Sheet Issue:- P3
Prospective Data
Insulated Gate Bi-Polar Transistor Type T0900DF65A
Absolute Maximum Ratings
VCES VCES VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Collector
- emitter voltage (Tj 25°C) Collector
- emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate. Peak gate
- emitter voltage
MAXIMUM LIMITS 6500 6500 6000 3600 ±20
UNITS
V V V V V
IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum...
