T0960VC17G
Date:- 30 Nov, 2016 Data Sheet Issue:- P1
Tentative data
Insulated Gate Bi-Polar Transistor Type T0960VC17G
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate
- emitter voltage
MAXIMUM LIMITS 1700
±20
UNITS
IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum mutation loop inductance 150n H. 4) Half-sinewave, 125°C Tj initial.
MAXIMUM LIMITS 960 1920 960...
