T1000EC33G
Insulated Gate Bi-polar Transistor Type T1000EC33G
Date:- 04 Oct, 2019 Data Sheet Issue:- P2
Tentative data
Insulated Gate Bi-Polar Transistor Type T1000EC33G
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate
- emitter voltage
MAXIMUM LIMITS 3300 1800 ±20
UNITS
IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX PD (di/dt)cr Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Maximum power dissipation, Diode (Note 2) Critical diode di/dt (note 3) Operating temperature range. Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum mutation...
