IXYS T1000TC33E
Insulated Gate Bi-Polar Transistor
| Part No. | T1000TC33E |
|---|---|
| Datasheet | T1000TC33E Download |
| Manufacturer |  IXYS |
| Description | Insulated Gate Bi-Polar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate – emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. MAXIMUM LIMITS 1000 2000 1000 6.4 -40 to +125 -40 to +125 UNITS A A A kW °C °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. Provisional Data Sheet T1000TC33E Issue A1 Page 1 of 6 June 2018 Characteristics Insulated Gate Bi-polar Transistor Type T1000TC33E IGBT Characteristics PARAMETER VCE(sat) Collector – emitter saturation voltage VT0 rT VGE(TH) ICES IGES Cies td(on) tr(V) Qg(on) Eon td(off) tf(I) Qg(off) Eoff Threshold voltage Slope resi...
