T1000TC33E
Date:- 1 June, 2018 Data Sheet Issue:- A1
Advance Data
Insulated Gate Bi-Polar Transistor Type T1000TC33E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate
- emitter voltage
MAXIMUM LIMITS 3300 1800 ±20
UNITS
IC(DC) ICRM IECO PMAX Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range.
MAXIMUM LIMITS 1000 2000 1000 6.4
-40 to +125 -40 to +125
UNITS
A A A k W °C °C
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum mutation loop inductance 200n H.
Provisional Data Sheet T1000TC33E Issue A1
Page 1 of 6
June 2018
Characteristics
Insulated Gate Bi-polar Transistor Type T1000TC33E
IGBT Characteristics PARAMETER
VCE(sat) Collector
- emitter...
