T1000TC33E - Insulated Gate Bi-Polar Transistor

IXYS (now Littelfuse)

Datasheet Details

Part number	T1000TC33E
Manufacturer	IXYS (now Littelfuse)
File Size	1.06 MB
Description	Insulated Gate Bi-Polar Transistor
Datasheet	T1000TC33E Datasheet

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Date:- 1 June, 2018 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T1000TC33E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate – emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. MAXIMUM LIMITS 1000 2000 1000 6.4 -40 to +125 -40 to +125 UNITS A A A kW °C °C Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH.