IXYS T1200EB45E
Insulated Gate Bi-Polar Transistor
| Part No. | T1200EB45E |
|---|---|
| Datasheet | T1200EB45E Download |
| Manufacturer |  IXYS |
| Description | Insulated Gate Bi-Polar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range Notes: - 1) Unless otherwise indicated Tj = 125ºC 2) Tsink = 25°C, double side cooled 3) The use of an anti-parallel diode is recommended MAXIMUM LIMITS 1200 2400 1200 12.5 -40 to +125 -40 to +125 UNITS A A A kW °C °C Provisional Data Sheet T1200EB45E Issue 1 Page 1 of 6 October, 2009 WESTCODE An IXYS Company Insulated Gate Bi-polar Transistor Type T1200EB45E Characteristics IGBT
