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Date:- 19 Oct, 2009 Data Sheet Issue:- 1
Provisional Data
Insulated Gate Bi-Polar Transistor Type T1200EB45E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate – emitter voltage
MAXIMUM LIMITS
4500
2800
±20
UNITS
V V V
IC(DC) ICRM IECO PMAX Tj op Tstg
RATINGS
Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range
Notes: -
1) Unless otherwise indicated Tj = 125ºC 2) Tsink = 25°C, double side cooled 3) The use of an anti-parallel diode is recommended
MAXIMUM LIMITS
1200 2400 1200 12.
T1200EB45E Datasheet
