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T1200EB45E

T1200EB45E is Insulated Gate Bi-Polar Transistor manufactured by IXYS.
T1200EB45E datasheet preview

T1200EB45E Datasheet

Part number T1200EB45E
Datasheet T1200EB45E Datasheet PDF (Download)
File Size 225.37 KB
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
T1200EB45E page 2 T1200EB45E page 3

T1200EB45E Overview

Date:- 19 Oct, 2009 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T1200EB45E Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate Peak gate emitter voltage MAXIMUM.

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