IXYS T1500EC33E
Insulated Gate Bi-Polar Transistor
| Part No. | T1500EC33E |
|---|---|
| Datasheet | T1500EC33E Download |
| Manufacturer |  IXYS |
| Description | Insulated Gate Bi-Polar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 300nH. MAXIMUM LIMITS 1500 3000 3000 9.6 -40 to +125 -40 to +125 UNITS A A A kW °C °C Prospective Data Sheet T1500EC33E Issue P1 Page 1 of 7 July, 2019 Characteristics IGBT Characteristics PARAMETER VCE(sat) Collector – emitter saturation voltage V0 rs VGE(TH) ICES IGES Cies td(on) tr(V) Qg(on) Eon td(off) tf(I) Qg(off) Eoff Threshold voltage Slope resistance Gate threshold voltage Collector –...
