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T1500EC33E - Insulated Gate Bi-Polar Transistor

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Date:- 22 July, 2019 Data Sheet Issue:- P1 Tentative Data Insulated Gate Bi-Polar Transistor Type T1500EC33E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 3300 1800 ±20 UNITS V V V IC ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 300nH. MAXIMUM LIMITS 1500 3000 3000 9.