T1500EC33E
Date:- 22 July, 2019 Data Sheet Issue:- P1
Tentative Data
Insulated Gate Bi-Polar Transistor Type T1500EC33E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate
- emitter voltage
MAXIMUM LIMITS 3300 1800 ±20
UNITS
IC ICRM IECO PMAX Tj op Tstg
RATINGS
Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum mutation loop inductance 300n H.
MAXIMUM LIMITS 1500 3000 3000 9.6
-40 to +125 -40 to +125
UNITS
A A A k W °C °C
Prospective Data Sheet T1500EC33E Issue P1
Page 1 of 7
July, 2019
Characteristics
IGBT Characteristics PARAMETER
VCE(sat) Collector
- emitter saturation voltage
V0 rs VGE(TH) ICES IGES...
