T1500TB25E
Date:- 18 Feb, 2014 Data Sheet Issue:- 1
Insulated Gate Bi-Polar Transistor Type T1500TB25E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector
- emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate
- emitter voltage
MAXIMUM LIMITS
±20
UNITS
IC(DC) ICRM IECO PMAX Tj Tstg
RATINGS
DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range.
Notes:
- 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum mutation loop inductance 300n H.
MAXIMUM LIMITS
1500 3000 1500 7.8
-40 to +125 -40 to +125
UNITS
A A A k W °C °C
Data Sheet T1500TB25E Issue 1
Page 1 of 6
February, 2014
Insulated Gate Bi-polar Transistor Type T1500TB25E
Characteristics
IGBT Characteristics PARAMETER
VCE(sat) Collector
- emitter...
