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T2250AB25E - Insulated Gate Bi-Polar Transistor

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Part number T2250AB25E
Manufacturer IXYS
File Size 254.62 KB
Description Insulated Gate Bi-Polar Transistor
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    WESTCODE An IXYS Company Date:- 25 Jan, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T2250AB25E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC(DC) ICRM IECO PMAX Tjop Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Operating temperature range. Storage temperature range. Notes: - 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) The use of an anti-parallel diode is recommended. MAXIMUM LIMITS 2250 4500 2250 11.
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