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Date:- 11 Jan, 2020 Data Sheet Issue:- 2
Insulated Gate Bi-Polar Transistor Type T2960BB45E
Absolute Maximum Ratings
VCES VDC link VGES
VOLTAGE RATINGS
Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate – emitter voltage
MAXIMUM LIMITS 4500 2800 ±20
UNITS
V V V
IC ICRM IECO PMAX Tj op Tstg
RATINGS
Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (note 2) Operating temperature range Storage temperature range
Notes: 1) Unless otherwise indicated Tj = 125ºC. 2) Tsink = 25°C, double side cooled. 3) Maximum commutation loop inductance 200nH. 4) Half-sinewave, 125°C Tj initial.
MAXIMUM LIMITS 3000 6000 3000 23.
T2960BB45E Datasheet
