IXYS TA36N30P
IXTA36N30P
| Part No. | TA36N30P |
|---|---|
| Datasheet | TA36N30P Download |
| Manufacturer |  IXYS |
| Description | IXTA36N30P |
| Buy | Stock & Price |
MAXIMUM RATINGS
300 300 ± 20 V V V A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S (TAB) D = Drain TAB = Drain G D S (TAB) G D S (TAB) TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 36 90 36 30 1.0 10 300 -55 ... +150 150 -55 ... +150 TO-220 (IXTP) TO-263 (IXTA) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220) 300 260FEATURES
1.13/10 Nm/lb.in. 5.5 4 3 g g g z z Md Weight z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±100 25 250 92 110 V V nA µA µA mΩ Advantages z z z Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process.
