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VKI50-12P1 Datasheet IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: VKI 50-12P1 IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA IC25 = 49 A VCES = 1200 V VCE(sat) typ. = 3.1 V Preliminary data sheet F10 P18 NTC N9 A1 A4 D4 L9 O7 S18 K10 K13 H13 X18 T16 B3 Pin arangement see outlines IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 47 Ω; TVJ = 125°C non-repetitive 49 33 50 VCES 10 A A A µs TC = 25°C 208 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 3.1 3.5 V GE(th) I = 1 mA; V = V C GE CE 4.5 ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) t r td(off) t f Eon Eoff Inductive load, TVJ = 125°C V = 600 V; I = 30 A CE C VGE = 15/0 V; RG = 47 Ω 100 70 500 70 4.6 3.4 C V = 25 V; V = 0 V; f = 1 MHz ies CE GE 1.65 RthJC RthJH (per IGBT) with heatsink pound (0.42 K/m.K; 50 µm) 1.2 IXYS reserves the right to change limits, test conditions and dimensions. 3.7 V V 6.5 V 1.1 mA 4.2 mA 180 nA ns ns ns ns mJ mJ nF 0.

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate Advantages.
  • space savings.
  • reduced protection circuits.
  • package designed.

VKI50-12P1 Distributor