IXYS VMM15-045
Dual Power MOSFET Modules
MAXIMUM RATINGS
per switch 450 450 ±20 ±30 20 16 80 175 -40 ... +150 150 -40 ... +125 V V V V A A A W °C °C °C V~ V~ Nm lb.in. gFEATURES
q q VDSS VDGR V GS V GSM I D25 I D85 I DM PD TJ TJM Tstg VISOL Md Weight 1, 4 = Gate, 5, 8 = Drain 6, 7 = Source, 2, 3 Kelvin Source 50/60 Hz IISOL ≤ 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 UNF) 3000 3600 2-2.5 18-22 28 q q q q q 2 independent MOSFET in 1 package Package with DCB ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin contact for easy drive UL registered E 72873APPLICATIONS
Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. 450 2.0 5.5 V V q q q q VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, I D = 0.5 mA V DS = VGS , ID = 5 mA VGS = ±20 V DC, VDS = 0 V DS = VDSS , VGS = 0 V, TJ = 25°C V DS = 0.8● VDSS, VGS = 0 V, TJ = 125°C VGS = 10 V, ID = 0.5
● ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % AC mot...