IXYS VMM650-01F
Dual Power HiPerFET Module
| Part No. | VMM650-01F |
|---|---|
| Datasheet | VMM650-01F Download |
| Manufacturer |  IXYS |
| Description | Dual Power HiPerFET Module |
| Buy | Stock & Price |
MAXIMUM RATINGS
100 ±20 680 500 680 500 V V A A A AFEATURES
● HiPerFET TM technology – low RDSon – unclamped inductive switching (UIS) capability – dv/dt ruggedness – fast intrinsic reverse diode – low gate charge● thermistor for internal temperature measurement
● package – low inductive current path – screw connection to high current main terminals – use of non interchangeable connectors for auxiliary terminals possible – Kelvin source terminals for easy drive – isolated DCB ceramic base plate Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.8 2 1.5 1 1440 200 680 150 250 400 200 1.2 300 0.12 1.5 2.2 mΩ 4 1 V mA mA µA nC nC nC ns ns ns ns V ns 0.08 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF trr VGS = 10 V; ID = ID80 VDS = 20 V; ID = 30 mA VDS = 0.8
● VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 75 V; ID = ID80
APPLICATIONS
● converters with high power density for – main and auxi...