IXYS VMM90-09F
Dual Power HiPerFET Module
| Part No. | VMM90-09F |
|---|---|
| Datasheet | VMM90-09F Download |
| Manufacturer |  IXYS |
| Description | Dual Power HiPerFET Module |
| Buy | Stock & Price |
MAXIMUM RATINGS
900 V ±20 V 85 A 65 A 85 A 65 A Symbol RDSon VGSth I DSS IGSS Qg Qgs Qgd t d(on) tr td(off) tf VF trr RthJC RthJS Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID80 V DS = 20 V; ID = 30 mA V DS = 0.8● V; DSS V GS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 450 V; ID = 50 A 3 1.5 960 225 430 76 mΩ 5V 0.4 mA mA 1 µA nC nC nC VGS= 10 V; VDS = 0.5
● VDSS; I D = I; D80 R G = 0.47 Ω 150 ns 180 ns 330 ns 140 ns (diode) IF = 90 A; VGS = 0 V (diode) IF = 90 A; -di/dt = 400 A/µs; VDS = 100 V with heat transfer paste 1.1 1.6 V 250 ns 0.08 K/W 0.12 K/W
FEATURES
● HiPerFET TM technology – low RDSon – unclamped inductive switching (UIS) capability – dv/dt ruggedness – fast intrinsic reverse diode – low gate charge● thermistor for internal temperature measurement
● package – low inductive current path – screw connection to high current main terminals – use of non interchangeable connectors for auxi...
