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VMO1200-01F - N-Channel Enhancement Mode MOSFET

Overview

PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max.

Key Features

  • PolarHT™ MOSFET technology - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode.
  • package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate.