VMO1200-01F Description
PolarHT™ Module N-Channel Enhancement Mode D G KS S VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS(on) = 1.25 mΩ max. ID = ID80 TVJ = 25°C TVJ = 125°C VDS = 20 V; ID = 3 mA VDS = 0.8 VDSS;.
VMO1200-01F Key Features
- PolarHT™ MOSFET technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
- package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
VMO1200-01F Applications
- converters with high power density for