VUE50-12NO1
VUE50-12NO1 is Fast Recovery Epitaxial Diode manufactured by IXYS.
Features
/ Advantages:
- Package with DCB ceramic base plate
- Improved temperature and power cycling
- Planar passivated chips
- Very low forward voltage drop
- Very low leakage current
Applications:
- Supplies for DC power equipment
- Input and output rectifiers for high frequency
- Battery DC power supplies
- Field supply for DC motors
Package: V1-A-Pack
- Isolation Voltage: 3600 V~
- Industry standard outline
- Ro HS pliant
- Soldering pins for PCB mounting
- Height: 17 mm
- Base plate: DCB ceramic
- Reduced weight
- Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210720b
Fast Diode
Symbol VRSM VRRM IR VF
I DAV
Definition
Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current, drain current forward voltage drop bridge output current
VR = 1200 V VR = 960 V IF = 20 A IF = 60 A IF = 20 A IF = 60 A TC = 85°C rectangular d =⅓
VF0 r F R th JC R th CH Ptot I FSM CJ I RM t rr threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current junction capacitance max. reverse recovery current t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600 V f = 1 MHz reverse recovery time
IF = 30 A; VR = 540 V -di F/dt = 200 A/µs
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C
Ratings min. typ. max. Unit 1200 V 1200 V 750 µA 7 m A 2.35 V 2.87 V...