Download FMM75-01F Datasheet PDF
FMM75-01F page 2
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FMM75-01F Description

FMM 75-01F HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM ID25 = 75 A VDSS = 100 V RDSontyp. IF ≤ 300A;⎮diF/dt⎮≤ 100A/µs; RG = 2 Ω TVJ = 150°C 5 V/ns TC = 25°C 30 mJ Symbol R DSon VGSth IDSS I GSS Q g Qgs Q gd td(on) tr t d(off) tf VF trr R thJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.

FMM75-01F Key Features

  • HiPerFETTM technology
  • low RDSon
  • low gate charge for high frequency
  • unclamped inductive switching (UIS)
  • dv/dt ruggedness
  • fast intrinsic reverse diode
  • ISOPLUS i4-PACTM package
  • isolated back surface
  • low coupling capacity between pins
  • enlarged creepage towards heatsink