IXGH20N30 Description
.. HiPerFASTTM IGBT IXGH20N30 VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 40 A = 1.45 V = 180 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous.
IXGH20N30 Key Features
- International standard package JEDEC TO-247 AD
- High current handling capability
- Newest generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity