IXGT20N120 Description
.. IGBT Preliminary Data Sheet IXGH 20N120 VCES IXGT 20N120 IC25 VCE(sat) tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ.
IXGT20N120 Key Features
- 55 ... +150 150 -55 ... +150 300 260
- International
- MOS Gate turn-on
- drive simplicity