VMO580-02F Description
HipPerFETTM Module N-Channel Enhancement Mode VMO 580-02F VDSS ID25 RDS(on) = 200 V = 580 A = 3.8 mΩ D S D G KS G KS S Preliminary Data MOSFET Symbol VDSS VGS ID25 ID80 IF25 IF80 TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C Conditions TVJ = 25°C to.
VMO580-02F Key Features
- HiPerFETTM technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
- package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
VMO580-02F Applications
- converters with high power density for