ICE17N60FP Description
Preliminary Data Sheet ICE17N60FP ICE17N60FP N-Channel Enhancement Mode MOSFET.
ICE17N60FP Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 1800 600 5 15 39 10 55 6