Datasheet Summary
Preliminary Data Sheet
ICE22N60 ICE22N60 N-Channel
Enhancement Mode MOSFET
Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Optimized design for hard switching SMPS topologies
HALOGEN
Product Summary ID rDS(on)
FREE
TA=25oC
22A
Max Min Typ Typ
BVDSS @Tjmax ID=250uA 650V VGS=10V 0.14Ω VDS=480V 82nC
Qg
T0220
ICEMOS AND ITS SISTER PANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal...
