ICE35N60W - N-Channel Enhancement Mode MOSFET

Icemos

Key Features

TO247 package.
Low rDS(on).
Ultra Low Gate Charge.
High dv/dt capability.
High Unclamped Inductive Switching (UIS) capability.
High peak current capability.
Increased transconductance performance.
Optimized design for high performance power systems.

ICE35N60W n-channel enhancement mode mosfet by Icemos - Datasheet Preview

Datasheet Details

Part number	ICE35N60W
Manufacturer	Icemos
File Size	689.35 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	ICE35N60W Datasheet

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Preliminary Data Sheet ICE35N60W ICE35N60W N-Channel Enhancement Mode MOSFET Features • TO247 package • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 35A 600V 0.075Ω 187nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.