ICE35N60W Description
Preliminary Data Sheet ICE35N60W ICE35N60W N-Channel Enhancement Mode MOSFET.
ICE35N60W Key Features
- TO247 package
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 640 3 0.5