ICE73N199 Description
Preliminary Data Sheet ICE73N199 ICE73N199 N-Channel Enhancement Mode MOSFET.
ICE73N199 Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 0.7 oC/W
- 260 oC