ICE7N60 Overview
Preliminary Data Sheet ICE7N60 ICE7N60 N-Channel Enhancement Mode MOSFET.
ICE7N60 Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 1.9 °C/W
- 260 °C
