2SB1340 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·plement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications.
2SB1340 is Silicon PNP Darlington Power Transistor manufactured by Inchange Semiconductor Company Limited.
| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1340 | Power Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·plement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications.