2SB1340 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·plement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications.
2SB1340 Datasheet Details
| Part number | 2SB1340 |
|---|---|
| Datasheet | 2SB1340_InchangeSemiconductorCompanyLimited.pdf |
| File Size | 214.31 KB |
| Manufacturer | Inchange Semiconductor Company Limited |
| Description | Silicon PNP Darlington Power Transistor |
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