Datasheet Details
| Part number | 2SB1340 |
|---|---|
| Manufacturer | Inchange Semiconductor Company Limited |
| File Size | 214.31 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Datasheet | 2SB1340_InchangeSemiconductorCompanyLimited.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor 2SB1340.
| Part number | 2SB1340 |
|---|---|
| Manufacturer | Inchange Semiconductor Company Limited |
| File Size | 214.31 KB |
| Description | Silicon PNP Darlington Power Transistor |
| Datasheet | 2SB1340_InchangeSemiconductorCompanyLimited.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -10 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1340 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1340 | Power Transistor | Rohm |
| Part Number | Description |
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