A1265N Overview
Key Specifications
Description
With TO-3P(I) package - Complement to type 2SC3182 - 2SA1265 with short pin APPLICATIONS - Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol SYMBOL VCBO VCEO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W ℃ ℃ VEBO IC IB B PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1265N TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -140 V VCEsat VBE Collector-emitter saturation voltage IC=-7A; IB=-0.7A IC=-5A ; VCE=-5V -0.8 -2.0 V Base-emitter voltage -1.0 -1.5 V μA μA ICBO Collector cut-off current VCB=-140V; IE=0 -5 IEBO Emitter cut-off current VEB=-5V; IC=0 -5 hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-5A ; VCE=5V 35 fT Cob Transition frequency IC=-1A ; VCE=-5V IE=0 ; VCB=10V ;f=1MHz 30 MHz Output capacitance 480 pF hFE-1 Classifications O 80-160 R 55-110 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1265N Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N 4.
