Datasheet Details
| Part number | A1265N |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 203.17 KB |
| Description | 2SA1265N |
| Datasheet | A1265N_InchangeSemiconductorCompany.pdf |
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Overview: Inchange Semiconductor Product Specification Silicon PNP Power Transistors.
| Part number | A1265N |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 203.17 KB |
| Description | 2SA1265N |
| Datasheet | A1265N_InchangeSemiconductorCompany.pdf |
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·With TO-3P(I) package ·plement to type 2SC3182 ·2SA1265 with short pin APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO ..
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W ℃ ℃ VEBO IC IB B PT Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1265N TYP.
MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -140 V VCEsat VBE Collector-emitter saturation voltage IC=-7A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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A1265 | 2SA1265 | Toshiba |
| Part Number | Description |
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