Datasheet4U Logo Datasheet4U.com

10N70 - N-Channel Mosfet Transistor

Key Features

  • Drain Current.
  • ID= 10A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 700V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10N70 N-CHANNEL POWER MOSFET Unisonic Technologies
10N70-C N-CHANNEL POWER MOSFET Unisonic Technologies
10N70-MH N-CHANNEL POWER MOSFET UTC
10N70-ML N-CHANNEL POWER MOSFET UTC
10N70-Q N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
10N60 N-Channel Mosfet Transistor
10N80 N-Channel MOSFET
10N90 N-Channel Mosfet Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 10N70 ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 700 V Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous 10 A Drain Current-Single Plused 40 A Total Dissipation @TC=25℃ 150 W Max.