10N80 Datasheet N-channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

Datasheet Details

Part number	10N80
Manufacturer	Inchange Semiconductor
File Size	252.07 KB
Description	N-Channel MOSFET
Datasheet	10N80-InchangeSemiconductor.pdf

General Description

·Designed for use a load switch or in PWM applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous ±30 V 10 A IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ 40 A 36 W TJ Max.

Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.47 ℃/W 10N80 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;

Key Features

Drain Current.
ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS= 800V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

10N80 Distributor & Price

Compare 10N80 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Part Number	Description	Manufacturer
10N80	N-CHANNEL POWER MOSFET	Unisonic Technologies
10N80	N-Channel Power MOSFET	nELL
10N80-CQ	N-CHANNEL POWER MOSFET	UTC
10N80-FC	N-CHANNEL POWER MOSFET	UTC
10N80C	800V N-Channel MOSFET	Fairchild Semiconductor

More Datasheets from Inchange Semiconductor

Part Number	Description
10N60	N-Channel Mosfet Transistor
10N70	N-Channel Mosfet Transistor
10N90	N-Channel Mosfet Transistor