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10N80 Datasheet

Manufacturer: Inchange Semiconductor
10N80 datasheet preview

10N80 Details

Part number 10N80
Datasheet 10N80 Datasheet PDF (Download)
File Size 252.07 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
10N80 page 2

10N80 Overview

·Designed for use a load switch or in PWM applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous ±30 V 10 A IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ 40 A 36 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ,...

10N80 Key Features

  • Drain Current -ID= 10A@ TC=25℃ -Drain Source Voltage

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