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12N90 - N-Channel Mosfet Transistor

Features

  • Drain Current ID= 12A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 900V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max).
  • Fast Switching.

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N90 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.95Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply ·DC-DC converters ·AC motor control ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 900 V Gate-Source Voltage-Continuous ±30 V Drain Current-Continuous 12 A Drain Current-Single Plused 48 A Total Dissipation @TC=25℃ 225 W Max. Operating Junction Temperature 150 ℃ Storage Temperature -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.
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