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15N12 - N-Channel Mosfet Transistor

Key Features

  • Drain Current ID= 15A@ TC=25℃.
  • Drain Source Voltage : VDSS= 120V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 120 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Plused 40 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 15N12 isc website：www.iscsemi.