27N10 - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain Current ID= 27A@ TC=25℃.
Drain Source Voltage- : VDSS= 100V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max).
Fast Switching.

27N10 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	27N10
Manufacturer	Inchange Semiconductor
File Size	59.25 KB
Description	N-Channel MOSFET
Datasheet	27N10 Datasheet

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 27N10 ·FEATURES ·Drain Current ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 V V ID Drain Current-Continuous 27 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 105 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.