Datasheet4U Logo Datasheet4U.com

27N10 - N-Channel MOSFET

Datasheet Summary

Features

  • Drain Current ID= 27A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max).
  • Fast Switching.

📥 Download Datasheet

Datasheet preview – 27N10

Datasheet Details

Part number 27N10
Manufacturer Inchange Semiconductor
File Size 59.25 KB
Description N-Channel MOSFET
Datasheet download datasheet 27N10 Datasheet
Additional preview pages of the 27N10 datasheet.

📁 Similar Datasheet

  • 27N25 - N-Channel MOSFET (Fairchild Semiconductor)
  • 27N80 - IXFK27N80 (IXYS Corporation)
Other Datasheets by Inchange Semiconductor
  • 27N06 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 27N10 ·FEATURES ·Drain Current ID= 27A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.07Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 V V ID Drain Current-Continuous 27 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 105 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.
Published: |