2N1470 - Silicon NPN Power Transistor

Inchange Semiconductor

General Description

Excellent Safe Operating Area Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIONS

applications.

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2N1470 silicon npn power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N1470
Manufacturer	Inchange Semiconductor
File Size	94.23 KB
Description	Silicon NPN Power Transistor
Datasheet	2N1470 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIONS ·Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 3 PC Collector Power Dissipation@TC=25℃ 55 A W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.iscsemi.