Datasheet Details
| Part number | 2N1470 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 94.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N1470-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | 2N1470 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 94.23 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N1470-InchangeSemiconductor.pdf |
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·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIONS ·Designed for general purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 3 PC Collector Power Dissipation@TC=25℃ 55 A W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ isc website：.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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