Description
¡¤With TO-66 package APPLICATIONS ¡¤Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current 2N3054 Power dissipation 2N3054A Junction temperature Storage temperature TC=25¡æ 75 200 -65~200 ¡æ ¡æ Open emitter .DataSheet.net/ CONDITIONS VALUE 90 55 7 4 2 25 UNIT V V V A A W Open base Open collector SYMBOL PARAMETER 2N3054 Rth j-C Datasheet pdf - http://..co.kr/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150¡æ VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V .DataSheet.net/ 2N3054 2N3054A SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT MIN 55 TYP.
