2N3197
DESCRIPTION
- Excellent Safe Operating Area
- With TO-3 package
- Low collector saturation voltage
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- For medium-speed switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-5 A
PC TJ, Tstg
Collector Power Dissipation@TC=25℃
Operating and Storage Junction Temperature Range
-65~+200
W ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W isc website：.iscsemi.1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
