Datasheet Details
| Part number | 2N3197 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.18 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N3197-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2N3197.
| Part number | 2N3197 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.18 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N3197-InchangeSemiconductor.pdf |
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·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC TJ, Tstg Collector Power Dissipation@TC=25℃ 75 Operating and Storage Junction Temperature Range -65~+200 W ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website：www.iscsemi.com1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor 2N3197 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMB
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