Datasheet Details
| Part number | 2N3440 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.02 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N3440-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3440.
| Part number | 2N3440 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.02 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N3440-InchangeSemiconductor.pdf |
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 250 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 20mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3440 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N3440 | SILICON NPN TRANSISTORS | STMicroelectronics |
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2N3440 | HIGH VOLTAGE NPN TRANSISTORS | Seme LAB |
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2N3440 | HIGH VOLTAGE NPN TRANSISTORS | TT |
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2N3440 | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
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2N3440 | Silicon NPN Transistor | NTE |
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| 2N3173 | Silicon PNP Power Transistor |