Datasheet Details
| Part number | 2N3667 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.70 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N3667-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2N3667 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.70 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N3667-InchangeSemiconductor.pdf |
|
|
|
·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general purpose high power switch and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation@TC=25℃ 117 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3667 isc website：.iscsemi.
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