Datasheet4U Logo Datasheet4U.com

2N4348 - Silicon NPN Power Transistor

General Description

Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage The device employs the popular JEDEC TO-3 100% avalanche tested

and reliable operation.

High voltage high current power trans

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N4340 N-Channel JFET Calogic LLC
2N4340 N-Channel JFET Siliconix
2N4340 N-CHANNEL JFET Motorola
2N4340 N-Channel MOSFET Central Semiconductor
2N4340 N-Channel JFETs Vishay

Other Datasheets by Inchange Semiconductor

Part Number Description
2N4387 Silicon PNP Power Transistor
2N4388 Silicon PNP Power Transistor
2N4395 Silicon NPN Power Transistor
2N4396 Silicon NPN Power Transistor
2N4398 Silicon PNP Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 140 V Collector-Emitter Voltage 120 V Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=25℃ 120 W Junction Temperature 200 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.46 ℃/W 2N4348 isc website：www.