Datasheet Details
| Part number | 2N4387 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.70 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N4387-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N4387 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 185.70 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N4387-InchangeSemiconductor.pdf |
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·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 20 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 8.75 ℃/W 2N4387 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A;
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