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2N5344 - Silicon PNP Power Transistor

General Description

High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) High Switching Speed High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS

Designed for high voltage switching and amplifier applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N5344 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= -250V(Min) ·High Switching Speed ·High Current-Gain Bandwidth Product: fT= 60MHz(Min)@ IC= -0.1A APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PD TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Total Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -250 -250 -5 -1.0 -0.5 40 200 -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4.38 UNIT ℃/W isc Website：www.