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2N5493 - Silicon NPN Power Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fi

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5493 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 55V(Min) ·Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEV VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.