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2N5930 - Silicon NPN Power Transistors

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Description

DC Current Gain- : hFE= 20-100@IC= 10A Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS

applications.

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Datasheet Details

Part number 2N5930
Manufacturer Inchange Semiconductor
File Size 134.88 KB
Description Silicon NPN Power Transistors
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INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5930 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A APPLICATIONS ·Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc website：www.iscsemi.
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