Datasheet Details
| Part number | 2N5932 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 134.28 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N5932-InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product.
| Part number | 2N5932 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 134.28 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N5932-InchangeSemiconductor.pdf |
|
|
|
·DC Current Gain- : hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5932 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5932 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N5930 | Silicon NPN Power Transistors |
| 2N5931 | Silicon NPN Power Transistors |
| 2N5933 | Silicon NPN Power Transistors |
| 2N5934 | Silicon NPN Power Transistors |
| 2N5935 | Silicon NPN Power Transistors |
| 2N5936 | Silicon NPN Power Transistors |
| 2N5937 | Silicon NPN Power Transistors |
| 2N5929 | Silicon NPN Power Transistors |
| 2N5971 | Silicon NPN Power Transistors |
| 2N5039 | Silicon NPN Power Transistors |