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2N5936 - Silicon NPN Power Transistors

General Description

DC Current Gain- : hFE= 20-100@IC= 30A Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay d

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INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N5936 DESCRIPTION ·DC Current Gain- : hFE= 20-100@IC= 30A ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 20A APPLICATIONS ·Designed for use in power switching circuits,audio amplifiers, series and shunt-regulators, driver and output stages,DC-DC converters, inverters, and solenoid /relay driver service. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.