Datasheet Summary
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor
DESCRIPTION
- High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
- plement to Type 2N6045 isc Product Specification
APPLICATIONS
- Designed for general purpose amplifier and low speed switching...
