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2N6213 - Silicon PNP Power Transistor

General Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier application for high-voltage operationa

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters,deflection stages and high fidelity amplifiers.