2N6379
DESCRIPTION
- Low Collector Saturation Voltage
- High DC Current Gain
- High Power Dissipation
APPLICATIONS
- Designed for use in industrial-military power amplifier and switching circuit application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
VCE0
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-50 A
IB Base Current-Continuous
-20 A
PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature
250 W -65~200 ℃ -65~200 ℃ isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)1★ Collector-Emitter Saturation Voltage IC= -20A; IB= -2A
VCE(sat)2★ Collector-Emitter Saturation Voltage IC= -50A; IB= -10A
VBE(sat)1★ Base-Emitter Saturation Voltage
IC=...
