| Part number | 2N6379 |
|---|---|
| Datasheet | 2N6379-InchangeSemiconductor.pdf |
| File Size | 38.33 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
|
|
·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit application. IB= -2A VCE(sat)2★ Collector-Emitter Saturation Voltage IC= -50A; IB= -10A VBE(sat)1★ Base-Emitter Saturation Voltage IC= -20A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6379 | 50 Amp Power Transistors | Motorola |
| New England Semiconductor | 2N6379 | (2N6377 - 2N6379) HIGH-POWER PNP SILICON POWER TRANSISTOR | New England Semiconductor |
See all Inchange Semiconductor datasheets
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