2N6379 - Silicon PNP Power Transistors

Datasheet Summary

Description

Low Collector Saturation Voltage High DC Current Gain High Power Dissipation APPLICATIONS

and switching circuit application.

Inchange Semiconductor

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Datasheet Details

Part number	2N6379
Manufacturer	Inchange Semiconductor
File Size	38.33 KB
Description	Silicon PNP Power Transistors
Datasheet	2N6379 Datasheet
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INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -20 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 250 W -65~200 ℃ -65~200 ℃ isc website：www.iscsemi.

Published: Jun 18, 2016 |