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2N6420 - Silicon PNP Power Transistor

General Description

Contunuous Collector Current-IC= -1A Power Dissipation-PC= 35W @TC= 25℃ Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching reg

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6420 DESCRIPTION ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -175 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.0 A ICM Collector Current-Peak -5.0 A IB Base Current -1.