2N6420
2N6420 is Silicon PNP Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Contunuous Collector Current-IC= -1A
- Power Dissipation-PC= 35W @TC= 25℃
- Collector-Emitter Saturation Voltage-
: VCE(sat)= -5.0 V(Max)@ IC = -1A
APPLICATIONS
- Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-250
VCEO Collector-Emitter Voltage
-175
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-1.0 A
ICM Collector Current-Peak
-5.0 A
IB Base Current
-1.0 A
PC Collector Power Dissipation@TC=25℃ 35
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 5.0 ℃/W isc Website：.iscsemi....
