Datasheet Details
| Part number | 2N6421 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 139.56 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6421-InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
| Part number | 2N6421 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 139.56 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6421-InchangeSemiconductor.pdf |
|
|
|
·Contunuous Collector Current-IC= -2A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75 V(Max)@ IC = -1A APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -375 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak -5.0 A IB Base Current -1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W isc website：.iscs
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6421 | SILICON PNP POWER TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
| 2N6420 | Silicon PNP Power Transistor |
| 2N6489 | Silicon PNP Power Transistors |
| 2N6490 | Silicon PNP Power Transistors |
| 2N6491 | Silicon PNP Power Transistors |
| 2N6040 | Silicon PNP Power Transistors |
| 2N6041 | Silicon PNP Power Transistors |
| 2N6042 | Silicon PNP Power Transistors |
| 2N6050 | Silicon PNP Power Transistors |
| 2N6051 | Silicon PNP Power Transistors |
| 2N6052 | Silicon PNP Power Transistors |